NSQ1000
0.225 A, 60 V, 5.5 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET

From Microsemi Corp.

StatusACTIVE
Channel TypeN-CHANNEL
ConfigurationSEPARATE, 4 ELEMENTS
DS Breakdown Voltage-Min60 V
Drain Current-Max (ID)0.2250 A
Drain-source On Resistance-Max5.5 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Number of Elements4
Number of Terminals14
Operating ModeENHANCEMENT
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Package ShapeRECTANGULAR
Package StyleIN-LINE
Power Dissipation Ambient-Max1.3 W
Terminal FinishTIN LEAD
Terminal FormTHROUGH-HOLE
Terminal PositionDUAL
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

External links