NSQ1001
0.85 A, 30 V, 1 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET

From Microsemi Corp.

StatusACTIVE
Channel TypeN-CHANNEL
ConfigurationSEPARATE, 4 ELEMENTS
DS Breakdown Voltage-Min30 V
Drain Current-Max (ID)0.8500 A
Drain-source On Resistance-Max1 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Number of Elements4
Number of Terminals14
Operating ModeENHANCEMENT
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Package ShapeRECTANGULAR
Package StyleIN-LINE
Power Dissipation Ambient-Max1.3 W
Terminal FinishTIN LEAD
Terminal FormTHROUGH-HOLE
Terminal PositionDUAL
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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