W3E64M72S-266SBM 64M X 72 DDR DRAM, 0.75 ns, PBGA219
From Microsemi Corp.
Status | ACTIVE |
Access Mode | FOUR BANK PAGE BURST |
Access Time-Max (tRAC) | 0.7500 ns |
Memory Density | 4.83E9 deg |
Memory IC Type | DDR DRAM |
Memory Width | 72 |
Mfr Package Description | 25 X 32 MM, PLASTIC, BGA-219 |
Number of Functions | 1 |
Number of Ports | 1 |
Number of Terminals | 219 |
Number of Words | 6.71E7 words |
Number of Words Code | 64M |
Operating Mode | SYNCHRONOUS |
Operating Temperature-Max | 125 Cel |
Operating Temperature-Min | -55 Cel |
Organization | 64M X 72 |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | GRID ARRAY |
Supply Voltage-Max (Vsup) | 2.7 V |
Supply Voltage-Min (Vsup) | 2.3 V |
Supply Voltage-Nom (Vsup) | 2.5 V |
Surface Mount | Yes |
Technology | CMOS |
Temperature Grade | MILITARY |
Terminal Finish | NOT SPECIFIED |
Terminal Form | BALL |
Terminal Pitch | 1.27 mm |
Terminal Position | BOTTOM |