RD06HVF1-101 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
From Mitsubishi Electric & Electronics USA, Inc.
Status | ACTIVE |
Case Connection | SOURCE |
Channel Type | N-CHANNEL |
Configuration | SINGLE |
DS Breakdown Voltage-Min | 50 V |
Drain Current-Max (ID) | 3 A |
EU RoHS Compliant | Yes |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Highest Frequency Band | VERY HIGH FREQUENCY BAND |
Lead Free | Yes |
Mfr Package Description | ROHS COMPLIANT PACKAGE-3 |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Mode | DEPLETION |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT |
Terminal Finish | NOT SPECIFIED |
Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE |
Transistor Application | AMPLIFIER |
Transistor Element Material | SILICON |
Transistor Type | RF POWER |