NT5TU64M8AB-3CI
64M X 8 DDR DRAM, 0.45 ns, PBGA60

From Nanya Technology Corporation

StatusDISCONTINUED
Access ModeFOUR BANK PAGE BURST
Access Time-Max (tRAC)0.4500 ns
Memory Density5.37E8 deg
Memory IC TypeDDR DRAM
Memory Width8
Mfr Package Description0.80 MM PITCH, BGA-60
Number of Functions1
Number of Ports1
Number of Terminals60
Number of Words6.71E7 words
Number of Words Code64M
Operating ModeSYNCHRONOUS
Operating Temperature-Max85 Cel
Operating Temperature-Min-40 Cel
Organization64M X 8
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleGRID ARRAY, THIN PROFILE, FINE PITCH
Supply Voltage-Max (Vsup)1.9 V
Supply Voltage-Min (Vsup)1.7 V
Supply Voltage-Nom (Vsup)1.8 V
Surface MountYes
TechnologyCMOS
Temperature GradeINDUSTRIAL
Terminal FormBALL
Terminal Pitch0.8000 mm
Terminal PositionBOTTOM

External links