2SK814 N-Channel Enhancement MOSFET
From NEC Electronics
| @(VDS) (V) (Test Condition) | 20 |
| @I(D) (A) (Test Condition) | 8.0 |
| @V(DS) (V) (Test Condition) | 10 |
| Absolute Max. Power Diss. (W) | 35 |
| C(iss) Max. (F) | 1.2n |
| I(D) Abs. Drain Current (A) | 15 |
| Military | N |
| Package | SOT-186 |
| V(BR)DSS (V) | 30 |
| V(BR)GSS (V) | 20 |
| g(fs) Min. (S) Trans. conduct. | 6.0 |
| r(DS)on Max. (Ohms) | 100m |
