AFT09MS007NT1
Trans RF MOSFET N-CH 30V 3-Pin PLD-1.5W T/R

From NXP SEMICONDUCTORS

ApplicationVHF/UHF
Channel ModeEnhancement
Channel TypeN
Drain Efficiency (Typ)71(%)
Drain Source Voltage (Max)30(V)
Forward Transconductance (Typ)9.8(S)
Frequency (Max)941(MHz)
Frequency (Min)136(MHz)
Input Capacitance (Typ)@Vds107@7.5V(pF)
Mode Of OperationCW
MountingSurface Mount
Number of Elements1
Operating Temp Range-65C to 150C
Output Capacitance (Typ)@Vds56@7.5V(pF)
Output Power (Max)7.3(TYP)
Package TypePLD-1.5W
PackagingTape and Reel
Pin Count3
Power Dissipation (Max)182000(mW)
Power Gain (Typ)@Vds15.2(MAX)@7.5V(dB)
Rad HardenedNo
Reverse Capacitance (Typ)2.7@7.5V(pF)
Screening LevelMilitary

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