PDTC123EM,315
TRANS PREBIAS NPN 250MW SOT883

From NXP Semiconductors

CategoryDiscrete Semiconductor Products
Current - Collector (Ic) (Max)100mA
Current - Collector Cutoff (Max)1µA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 20mA, 5V
DatasheetsPDTC123E
FamilyTransistors (BJT) - Single, Pre-Biased
Frequency - Transition-
Mounting TypeSurface Mount
Other Names568-2152-2 934058288315 PDTC123EM T/R
Package / CaseSC-101, SOT-883
PackagingTape & Reel (TR)
Power - Max250mW
Product PhotosSC-101 SOT-883
Resistor - Base (R1) (Ohms)2.2k
Resistor - Emitter Base (R2) (Ohms)2.2k
Series-
Standard Package10,000
Supplier Device PackageDFN1006-3
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic150mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max)50V

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