2SJ496TZ-E
5000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET

From Renesas Electronics

StatusACTIVE
Channel TypeP-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min60 V
Drain Current-Max (ID)5 A
Drain-source On Resistance-Max0.2400 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package DescriptionSC-51, TO-92MOD, 3 PIN
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeROUND
Package StyleCYLINDRICAL
Power Dissipation Ambient-Max0.9000 W
Terminal FinishTIN COPPER
Terminal FormTHROUGH-HOLE
Terminal PositionBOTTOM
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE SMALL SIGNAL

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