NE8500100-A C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
From Renesas Electronics
| Status | DISCONTINUED |
| Channel Type | N-CHANNEL |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min | 10 V |
| Drain Current-Max (ID) | 1.12 A |
| EU RoHS Compliant | Yes |
| FET Technology | METAL SEMICONDUCTOR |
| Highest Frequency Band | C BAND |
| Lead Free | Yes |
| Mfr Package Description | DIE |
| Number of Elements | 1 |
| Operating Mode | DEPLETION |
| Package Body Material | UNSPECIFIED |
| Package Shape | RECTANGULAR |
| Package Style | UNCASED CHIP |
| Surface Mount | Yes |
| Terminal Finish | TIN BISMUTH |
| Terminal Form | NO LEAD |
| Terminal Position | UPPER |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | GALLIUM ARSENIDE |
| Transistor Type | RF SMALL SIGNAL |
