UPD44323362F1-C40-FJ1-A 1M X 36 LATE-WRITE SRAM, 2 ns, PBGA119
From Renesas Electronics
| Status | DISCONTINUED |
| Access Time-Max (tACC) | 2 ns |
| China RoHS Compliant | Yes |
| EU RoHS Compliant | Yes |
| Lead Free | Yes |
| Memory Density | 3.77E7 deg |
| Memory IC Type | LATE-WRITE SRAM |
| Memory Width | 36 |
| Mfr Package Description | 14 X 12 MM, 1.27 MM PITCH, LEAD FREE, PLASTIC, BGA-119 |
| Number of Functions | 1 |
| Number of Terminals | 119 |
| Number of Words | 1.05E6 words |
| Number of Words Code | 1M |
| Operating Mode | SYNCHRONOUS |
| Operating Temperature-Max | 70 Cel |
| Operating Temperature-Min | 0.0 Cel |
| Organization | 1M X 36 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY |
| Parallel/Serial | PARALLEL |
| Supply Voltage-Max (Vsup) | 2.62 V |
| Supply Voltage-Min (Vsup) | 2.38 V |
| Supply Voltage-Nom (Vsup) | 2.5 V |
| Surface Mount | Yes |
| Technology | CMOS |
| Temperature Grade | COMMERCIAL |
| Terminal Finish | TIN SILVER COPPER |
| Terminal Form | BALL |
| Terminal Pitch | 1.27 mm |
| Terminal Position | BOTTOM |
