NE34018-T1 S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HFET
From Renesas Electronics
Status | DISCONTINUED |
Case Connection | SOURCE |
Channel Type | N-CHANNEL |
Configuration | SINGLE |
DS Breakdown Voltage-Min | 3 V |
Drain Current-Max (ID) | 0.0300 A |
FET Technology | HETERO-JUNCTION |
Highest Frequency Band | S BAND |
Mfr Package Description | PLASTIC, SUPERMINI-4 |
Number of Elements | 1 |
Number of Terminals | 4 |
Operating Mode | DEPLETION |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE |
Power Dissipation Ambient-Max | 0.1500 W |
Power Gain-Min (Gp) | 14 dB |
Surface Mount | Yes |
Terminal Finish | TIN LEAD |
Terminal Form | GULL WING |
Terminal Position | DUAL |
Transistor Application | AMPLIFIER |
Transistor Element Material | SILICON |
Transistor Type | RF SMALL SIGNAL |