{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.9","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"39 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"6...

{"C1\/C2 Min. Capacitance Ratio":"2.9","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"600","Package":"DO-7","P(D) Max.(W) Power Dissipation":"400m","@Freq. (Hz) (Test Condition)":"50M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"39p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...

{"C1\/C2 Min. Capacitance Ratio":"2.9","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"600","Package":"Chip","@Freq. (Hz) (Test Condition)":"50M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"39p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...