CIG22H4R7MNE Inductor Power Chip Shielded Multi-Layer 4.7uH 20% 1MHz Ferrite 0.8A 0.233Ohm DCR 1008 T/R
From SAMSUNG
| Case Size | 1008 |
| Core Material | Ferrite |
| DC Current | 800(mA) |
| Failure Rate | Not Required |
| Inductance | 4.7(uH) |
| Military Standard | Not Required |
| Number of Terminals | 2 |
| Operating Temp Range | -40C to 125C |
| Packaging | Tape and Reel |
| Product Depth (mm) | 2.2(mm) |
| Product Diameter (mm) | Not Required(mm) |
| Product Height (mm) | 1.2(mm) |
| Product Length (mm) | 2.7(mm) |
| Rad Hardened | No |
| Shielding | Shielded |
| Technology | Multi-Layer |
| Test Frequency | 1(MHz) |
| Tolerance (+ or -) | 20% |
| Type | Power Chip |
