K3P7Q1000B-FC10 4M X 16 MASK PROM, 100 ns, PBGA48
From Samsung Semiconductor Division
| Status | ACTIVE |
| Access Time-Max (tACC) | 100 ns |
| Alternate Memory Width | 8 |
| Memory Density | 6.71E7 deg |
| Memory IC Type | MASK PROM |
| Memory Width | 16 |
| Mfr Package Description | 0.75 MM PITCH, FBGA-48 |
| Number of Functions | 1 |
| Number of Terminals | 48 |
| Number of Words | 4.19E6 words |
| Number of Words Code | 4M |
| Operating Mode | ASYNCHRONOUS |
| Operating Temperature-Max | 70 Cel |
| Operating Temperature-Min | 0.0 Cel |
| Organization | 4M X 16 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | SQUARE |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH |
| Parallel/Serial | PARALLEL |
| Supply Voltage-Max (Vsup) | 3.3 V |
| Supply Voltage-Min (Vsup) | 2.7 V |
| Supply Voltage-Nom (Vsup) | 3 V |
| Surface Mount | Yes |
| Technology | CMOS |
| Temperature Grade | COMMERCIAL |
| Terminal Finish | TIN LEAD |
| Terminal Form | BALL |
| Terminal Pitch | 0.7500 mm |
| Terminal Position | BOTTOM |
