M470T2953BS3-CCC 128M X 64 DDR DRAM MODULE, 0.6 ns, ZMA200
From Samsung Semiconductor Division
| Status | ACTIVE |
| Access Mode | DUAL BANK PAGE BURST |
| Access Time-Max (tRAC) | 0.6000 ns |
| Memory Density | 8.59E9 deg |
| Memory IC Type | DDR DRAM MODULE |
| Memory Width | 64 |
| Mfr Package Description | SODIMM-200 |
| Number of Functions | 1 |
| Number of Ports | 1 |
| Number of Terminals | 200 |
| Number of Words | 1.34E8 words |
| Number of Words Code | 128M |
| Operating Mode | SYNCHRONOUS |
| Organization | 128M X 64 |
| Package Body Material | UNSPECIFIED |
| Package Shape | RECTANGULAR |
| Package Style | MICROELECTRONIC ASSEMBLY |
| Supply Voltage-Max (Vsup) | 1.9 V |
| Supply Voltage-Min (Vsup) | 1.7 V |
| Supply Voltage-Nom (Vsup) | 1.8 V |
| Terminal Finish | TIN LEAD |
| Terminal Form | NO LEAD |
| Terminal Position | ZIG-ZAG |
