K4S281632O-LC750 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
From Samsung Electro-Mechanics
Status | ACTIVE |
Access Mode | FOUR BANK PAGE BURST |
Access Time-Max (tRAC) | 5.4 ns |
EU RoHS Compliant | Yes |
Lead Free | Yes |
Memory Density | 1.34E8 deg |
Memory IC Type | SYNCHRONOUS DRAM |
Memory Width | 16 |
Mfr Package Description | 0.400 X 0.875 INCH, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54 |
Number of Functions | 1 |
Number of Ports | 1 |
Number of Terminals | 54 |
Number of Words | 8.39E6 words |
Number of Words Code | 8M |
Operating Mode | SYNCHRONOUS |
Operating Temperature-Max | 70 Cel |
Operating Temperature-Min | 0.0 Cel |
Organization | 8M X 16 |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE, THIN PROFILE |
Supply Voltage-Max (Vsup) | 3.6 V |
Supply Voltage-Min (Vsup) | 3 V |
Supply Voltage-Nom (Vsup) | 3.3 V |
Surface Mount | Yes |
Technology | CMOS |
Temperature Grade | COMMERCIAL |
Terminal Finish | NOT SPECIFIED |
Terminal Form | GULL WING |
Terminal Pitch | 0.8000 mm |
Terminal Position | DUAL |