2N6660X-QR-EB 1.1 A, 60 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39
From Semelab Plc.
| Status | ACTIVE |
| Case Connection | DRAIN |
| Channel Type | N-CHANNEL |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 60 V |
| Drain Current-Max (ID) | 1.1 A |
| Drain-source On Resistance-Max | 3 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Mfr Package Description | METAL PACKAGE-3 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | METAL |
| Package Shape | ROUND |
| Package Style | CYLINDRICAL |
| Pulsed Drain Current-Max (IDM) | 3 A |
| Terminal Finish | NOT SPECIFIED |
| Terminal Form | WIRE |
| Terminal Position | BOTTOM |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Transistor Type | GENERAL PURPOSE POWER |
