SML100A9R1
9 A, 1000 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3

From Semelab Plc.

StatusACTIVE
Avalanche Energy Rating (Eas)1210 mJ
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min1000 V
Drain Current-Max (ID)9 A
Drain-source On Resistance-Max1.1 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Number of Elements1
Number of Terminals2
Operating ModeENHANCEMENT
Package Body MaterialMETAL
Package ShapeROUND
Package StyleFLANGE MOUNT
Pulsed Drain Current-Max (IDM)36 A
Terminal FinishTIN SILVER COPPER
Terminal FormPIN/PEG
Terminal PositionBOTTOM
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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