2SK4124
20 A, 500 V, 0.43 ohm, N-CHANNEL, Si, POWER, MOSFET

From SANYO Electric Co., Ltd.

StatusDISCONTINUED
Avalanche Energy Rating (Eas)124 mJ
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min500 V
Drain Current-Max (ID)20 A
Drain-source On Resistance-Max0.4300 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionTO-3PB, 3 PIN
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Power Dissipation Ambient-Max2.5 W
Pulsed Drain Current-Max (IDM)60 A
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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