BSN274T/R N-Channel Enhancement MOSFET - Vertical D-MOS Transistor
From Philips Semiconductors / NXP Semiconductors
@Freq. (Hz) (Test Condition) | 1M |
@I(D) (A) (Test Condition) | 250m |
@Temp (°C) (Test Condition) | 25 |
@V(DS) (V) (Test Condition) | 25 |
@V(GS) (V) (Test Condition) | 2.4 |
Absolute Max. Power Diss. (W) | 1.0 |
C(iss) Max. (F) | 90p |
I(D) Abs. Drain Current (A) | 250m |
I(DSS) Max. (A) | 1u |
I(GSS) Max. (A) | 100n |
Military | N |
Package | TO-92var |
Thermal Resistance Junc-Amb. | 125 |
V(BR)DSS (V) | 270 |
V(GS)th Max. (V) | 2 |
V(GS)th Min. (V) | .8 |
g(fs) Max, (S) Trans. conduct, | 400m |
g(fs) Min. (S) Trans. conduct. | 200m |
r(DS)on Max. (Ohms) | 14 |