BSN274T/R
N-Channel Enhancement MOSFET - Vertical D-MOS Transistor

From Philips Semiconductors / NXP Semiconductors

@Freq. (Hz) (Test Condition)1M
@I(D) (A) (Test Condition)250m
@Temp (°C) (Test Condition)25
@V(DS) (V) (Test Condition)25
@V(GS) (V) (Test Condition)2.4
Absolute Max. Power Diss. (W)1.0
C(iss) Max. (F)90p
I(D) Abs. Drain Current (A)250m
I(DSS) Max. (A)1u
I(GSS) Max. (A)100n
MilitaryN
PackageTO-92var
Thermal Resistance Junc-Amb.125
V(BR)DSS (V)270
V(GS)th Max. (V)2
V(GS)th Min. (V).8
g(fs) Max, (S) Trans. conduct,400m
g(fs) Min. (S) Trans. conduct.200m
r(DS)on Max. (Ohms)14

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