BSP50T/R
NPN Darlington Transistor

From Philips Semiconductors / NXP Semiconductors

@I(C) (A) (Test Condition)500m
@V(CE) (V) (Test Condition)10
Absolute Max. Power Diss. (W)1.5
I(C) Abs.(A) Collector Current2.0
I(CBO) Max. (A)10u
MilitaryN
PackageSOT-223
Semiconductor MaterialSilicon
V(BR)CEO (V)45
f(T) Min. (Hz) Transition Freq200M
h(FE) Min. Static Current Gain2.0k
t(d) Max. (s) Delay time.400n
t(off) Max. (s) Turn-Off Time1.5u
t(on) Max. (s) Turn-On Time400n®

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