BSP50T/R NPN Darlington Transistor
From Philips Semiconductors / NXP Semiconductors
@I(C) (A) (Test Condition) | 500m |
@V(CE) (V) (Test Condition) | 10 |
Absolute Max. Power Diss. (W) | 1.5 |
I(C) Abs.(A) Collector Current | 2.0 |
I(CBO) Max. (A) | 10u |
Military | N |
Package | SOT-223 |
Semiconductor Material | Silicon |
V(BR)CEO (V) | 45 |
f(T) Min. (Hz) Transition Freq | 200M |
h(FE) Min. Static Current Gain | 2.0k |
t(d) Max. (s) Delay time. | 400n |
t(off) Max. (s) Turn-Off Time | 1.5u |
t(on) Max. (s) Turn-On Time | 400n® |