2N6660 Transistor; MOSFET; , N-Channel; 60V; TO-39
From Solid State Manufacturing
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Dimensions | 9.39 x 9.01 x 4.58 mm |
| Forward Diode Voltage | -0.9 V |
| Forward Transconductance | 195 mS |
| Height | 4.57 mm |
| Maximum Continuous Drain Current | ±1.1 A |
| Maximum Drain Source Resistance | 5 Ω |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Source Voltage | ±40 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 6.25 W |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | TO-205AF |
| Pin Count | 3 |
| Typical Turn On Delay Time | 10 ns |
| Typical TurnOff Delay Time | 10 ns |
