SDF320JAASGD1B
3.3 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA

From Solitron Devices, Inc.

StatusACTIVE
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min400 V
Drain Current-Max (ID)3.3 A
Drain-source On Resistance-Max1.8 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionTO-254, 3 PIN
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialMETAL
Package ShapeSQUARE
Package StyleFLANGE MOUNT
Pulsed Drain Current-Max (IDM)13 A
Terminal FinishNOT SPECIFIED
Terminal FormPIN/PEG
Terminal PositionSINGLE
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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