VP2206N3-G
640 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92

From Supertex, Inc.

StatusActive
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min60 V
Drain Current-Max (ID)0.6400 A
Drain-source On Resistance-Max0.9000 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)40 pF
JEDEC-95 CodeTO-92
JESD-30 CodeO-PBCY-W3
JESD-609 Codee3
Mfr Package DescriptionGREEN PACKAGE-3
Moisture Sensitivity LevelNOT APPLICABLE
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT MODE
Package Body MaterialPLASTIC/EPOXY
Package ShapeROUND
Package StyleCYLINDRICAL
Peak Reflow Temperature (Cel)NOT SPECIFIED
Polarity/Channel TypeP-CHANNEL
Qualification StatusCOMMERCIAL
REACH CompliantYes
Surface MountNO
Terminal FinishMATTE TIN
Terminal FormWIRE
Terminal PositionBOTTOM
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON

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