TSM1N80CWRP 0.3 A, 800 V, 21.6 ohm, N-CHANNEL, Si, POWER, MOSFET
From Taiwan Semiconductor Co., Ltd.
| Status | ACTIVE |
| Avalanche Energy Rating (Eas) | 90 mJ |
| Channel Type | N-CHANNEL |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 800 V |
| Drain Current-Max (ID) | 0.3000 A |
| Drain-source On Resistance-Max | 21.6 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Mfr Package Description | ROHS COMPLIANT PACKAGE-4 |
| Number of Elements | 1 |
| Number of Terminals | 4 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Pulsed Drain Current-Max (IDM) | 1 A |
| Surface Mount | Yes |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Transistor Type | GENERAL PURPOSE POWER |
