2SA1201-Y(TE12L,CF
Bipolar Transistors - BJT Pwr Trans HiSpd PNP -0.8A 1W -120V

From Toshiba

BrandToshiba
Collector- Base Voltage VCBO- 120 V
Collector- Emitter Voltage VCEO Max- 120 V
Collector-Emitter Saturation Voltage- 1 V
ConfigurationSingle
DC Collector/Base Gain hfe Min80
DC Current Gain hFE Max240
Emitter- Base Voltage VEBO- 5 V
Factory Pack Quantity1000
Gain Bandwidth Product fT120 MHz
ManufacturerToshiba
Maximum DC Collector Current- 800 mA
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Package / CaseSC-62
PackagingReel
Pd - Power Dissipation1 W
Product CategoryBipolar Transistors - BJT
RoHSDetails
Transistor PolarityPNP

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