2SC2655-Y(TE6,F,M)
Bipolar Transistors - BJT NPN VCE 0.5V 900mW VCEO 50V tstg 1.0

From Toshiba

BrandToshiba
Collector- Base Voltage VCBO50 V
Collector- Emitter Voltage VCEO Max50 V
Collector-Emitter Saturation Voltage0.5 V
ConfigurationSingle
DC Collector/Base Gain hfe Min70
DC Current Gain hFE Max240
Emitter- Base Voltage VEBO5 V
Factory Pack Quantity3000
Gain Bandwidth Product fT100 MHz
ManufacturerToshiba
Maximum DC Collector Current2 A
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Mounting StyleThrough Hole
Package / CaseTO-92 MOD
PackagingTube
Pd - Power Dissipation900 mW
Product CategoryBipolar Transistors - BJT
RoHSDetails
Transistor PolarityNPN

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