2SK3017(F) MOSFET MOSFET N-Ch 900V 8.5A Rdson 1.25 Ohm
From Toshiba
| Brand | Toshiba |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 50 |
| Fall Time | 25 ns |
| Id - Continuous Drain Current | 8.5 A |
| Manufacturer | Toshiba |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |
| Mounting Style | Through Hole |
| Package / Case | TO-3P-3 |
| Pd - Power Dissipation | 90 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 1.25 Ohms |
| Rise Time | 25 ns |
| RoHS | Details |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 900 V |
| Vgs - Gate-Source Breakdown Voltage | 30 V |
