2SK672
N-Channel Enhancement MOSFET

From Toshiba

@I(D) (A) (Test Condition)5.0
@V(GS) (V) (Test Condition)10.0
Absolute Max. Power Diss. (W)40
I(D) Abs. Drain Current (A)10
MilitaryN
PackageTO-220AB
V(BR)DSS (V)60
V(GS)th Max. (V)3.5
V(GS)th Min. (V)1.5
r(DS)on Max. (Ohms)0.2

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