3SK225TE85L UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
From Toshiba America Electronic Components, Inc.
Status | ACTIVE |
Case Connection | SOURCE |
Channel Type | N-CHANNEL |
Configuration | SINGLE |
DS Breakdown Voltage-Min | 13.5 V |
Drain Current-Max (ID) | 0.0300 A |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Feedback Cap-Max (Crss) | 0.0500 pF |
Highest Frequency Band | ULTRA HIGH FREQUENCY BAND |
Number of Elements | 1 |
Number of Terminals | 4 |
Operating Mode | DUAL GATE, DEPLETION |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE |
Power Dissipation Ambient-Max | 0.1500 W |
Power Gain-Min (Gp) | 19 dB |
Surface Mount | Yes |
Terminal Finish | TIN LEAD |
Terminal Form | GULL WING |
Terminal Position | DUAL |
Transistor Application | AMPLIFIER |
Transistor Element Material | SILICON |
Transistor Type | RF SMALL SIGNAL |