3SK225TE85R UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
From Toshiba America Electronic Components, Inc.
| Status | ACTIVE |
| Case Connection | SOURCE |
| Channel Type | N-CHANNEL |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min | 13.5 V |
| Drain Current-Max (ID) | 0.0300 A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Feedback Cap-Max (Crss) | 0.0500 pF |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND |
| Number of Elements | 1 |
| Number of Terminals | 4 |
| Operating Mode | DUAL GATE, DEPLETION |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Power Dissipation Ambient-Max | 0.1500 W |
| Power Gain-Min (Gp) | 19 dB |
| Surface Mount | Yes |
| Terminal Finish | TIN LEAD |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
| Transistor Type | RF SMALL SIGNAL |
