SG2000GXH26 Silicon Controlled Rectifier
From Toshiba
| @ t(w) (s) (Test Condition) | 10m |
| @I(T) (A) (Test Condition) | 2.0k |
| @Temp. (°C) (Test Condition) | 125 |
| I(D) Max. (A) Leakage Current | 100m |
| I(GT) Max. (A) | 3.0 |
| I(T) Max.(A) On-state Current | 1.0k² |
| I(TSM) Max. (A) | 16k |
| Military | N |
| Package | TO-200AE |
| V(DRM) Max.(V)Rep.Pk.Off Volt. | 4.5k |
| V(GT) Max.(V) | 1.2 |
| V(T) Max. (V) | 3.6 |
| dv/dt Min. (V/us) | 1.0k |
| t(q) Typ. (s) | 26u |
