SG2000R24
Silicon Controlled Rectifier

From Toshiba

@ t(w) (s) (Test Condition)10m
@I(T) (A) (Test Condition)2.0k
@Temp. (°C) (Test Condition)125
I(D) Max. (A) Leakage Current50m
I(GT) Max. (A)2.5
I(T) Max.(A) On-state Current1.05k²
I(TSM) Max. (A)14k
MilitaryN
PackageTO-200AE
V(DRM) Max.(V)Rep.Pk.Off Volt.1.3k
V(GT) Max.(V)1.0
V(T) Max. (V)2.4
dv/dt Min. (V/us)1.0k
t(q) Typ. (s)23u

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