TPH4R003NL,L1Q
MOSFET Power moSFET N-ch single VDSS30V

From Toshiba

BrandToshiba
Channel ModeEnhancement
ConfigurationSingle
Fall Time3.5 ns
Id - Continuous Drain Current68 A
ManufacturerToshiba
Mounting StyleSMD/SMT
Package / CaseSOP-8
PackagingReel
Pd - Power Dissipation36 W
Product CategoryMOSFET
Qg - Gate Charge14.8 nC
Rds On - Drain-Source Resistance6.2 mOhms
Rise Time4.5 ns
RoHSDetails
SeriesU-MOSVIII
Transistor PolarityN-Channel
Typical Turn-Off Delay Time19 ns
Vds - Drain-Source Breakdown Voltage30 V
Vgs - Gate-Source Breakdown Voltage20 V
Vgs th - Gate-Source Threshold Voltage2.3 V

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