2SK672 N-Channel Enhancement MOSFET
From Toshiba
@I(D) (A) (Test Condition) | 5.0 |
@V(GS) (V) (Test Condition) | 10.0 |
Absolute Max. Power Diss. (W) | 40 |
I(D) Abs. Drain Current (A) | 10 |
Military | N |
Package | TO-220AB |
V(BR)DSS (V) | 60 |
V(GS)th Max. (V) | 3.5 |
V(GS)th Min. (V) | 1.5 |
r(DS)on Max. (Ohms) | 0.2 |