AGR19125EF
L BAND, Si, N-CHANNEL, RF POWER, MOSFET

From TriQuint

StatusACTIVE
Case ConnectionSOURCE
Channel TypeN-CHANNEL
ConfigurationSINGLE
DS Breakdown Voltage-Min65 V
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Highest Frequency BandL BAND
Number of Elements1
Number of Terminals2
Operating ModeENHANCEMENT
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Surface MountYes
Terminal FormFLAT
Terminal PositionDUAL
Transistor ApplicationAMPLIFIER
Transistor Element MaterialSILICON
Transistor TypeRF POWER

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