2N7310H4 P-Channel Enhancement MOSFET - Radiation Hardened to 1M RADs (Si)
From Various
| @(VDS) (V) (Test Condition) | 20 |
| @Temp (°C) (Test Condition) | 100 |
| Absolute Max. Power Diss. (W) | 75 |
| I(D) Abs. Drain Current (A) | 4 |
| I(D) Abs. Max.(A) Drain Curr. | 2 |
| I(DM) Max (A)(@25°C) | 12 |
| Military | N |
| Package | TO-204AA |
| V(BR)DSS (V) | 200 |
| V(BR)GSS (V) | 20 |
| r(DS)on Max. (Ohms) | 1.30 |
