IRF350R
N-Channel Enhancement MOSFET

From Various

@(VDS) (V) (Test Condition)20
@Freq. (Hz) (Test Condition)1M
@I(D) (A) (Test Condition)8.0
@Temp (°C) (Test Condition)25
@V(DS) (V) (Test Condition)25
@V(GS) (V) (Test Condition)10
Absolute Max. Power Diss. (W)150
C(iss) Max. (F)2.0n
I(D) Abs. Drain Current (A)15
I(D) Abs. Max.(A) Drain Curr.9
I(DM) Max (A)(@25°C)60
I(DSS) Max. (A)250u
I(GSS) Max. (A)100n
MilitaryN
PackageTO-204AA
Thermal Resistance Junc-Amb.30
V(BR)DSS (V)400
V(BR)GSS (V)20
V(GS)th Max. (V)4
V(GS)th Min. (V)2
g(fs) Max, (S) Trans. conduct,10
g(fs) Min. (S) Trans. conduct.8.0
r(DS)on Max. (Ohms)300m
t(d)off Max. (s) Off time150n
t(f) Max. (s) Fall time.75n
t(r) Max. (s) Rise time65n
td(on) Max (s) On time delay35n

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