SGSP367 N-Channel Enhancement MOSFET
From Various
| @(VDS) (V) (Test Condition) | 20 |
| @I(D) (A) (Test Condition) | 6.0 |
| @V(DS) (V) (Test Condition) | 25 |
| Absolute Max. Power Diss. (W) | 100 |
| C(iss) Max. (F) | 1.2n |
| I(D) Abs. Drain Current (A) | 12 |
| I(DSS) Min. (A) | 1.0m |
| I(GSS) Max. (A) | 100n |
| Military | N |
| Package | TO-220 |
| V(BR)DSS (V) | 200 |
| V(BR)GSS (V) | 20 |
| g(fs) Min. (S) Trans. conduct. | 3.0 |
| r(DS)on Max. (Ohms) | .90 |
| t(f) Max. (s) Fall time. | 30n |
| t(r) Max. (s) Rise time | 55n |
