2N7310H3 P-Channel Enhancement MOSFET - Radiation Hardened to 1M RADs (Si)
From Various
@(VDS) (V) (Test Condition) | 20 |
@Temp (°C) (Test Condition) | 100 |
Absolute Max. Power Diss. (W) | 75 |
I(D) Abs. Drain Current (A) | 4 |
I(D) Abs. Max.(A) Drain Curr. | 2 |
I(DM) Max (A)(@25°C) | 12 |
Military | N |
Package | TO-204AA |
V(BR)DSS (V) | 200 |
V(BR)GSS (V) | 20 |
r(DS)on Max. (Ohms) | 1.30 |