IRF840FXPBF
500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

From Vishay Presicion Group

StatusACTIVE
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE
DS Breakdown Voltage-Min500 V
Drain-source On Resistance-Max0.8500 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Terminal FinishNOT SPECIFIED
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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