Product Datasheet Search Results:

2N3666.pdf5 Pages, 385 KB, Scan
2N3666
Advanced Semiconductor, Inc.
Silicon Transistor Selection Guide
2N3666.pdf1 Pages, 55 KB, Scan
2N3666
Api Electronics Group
2000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5
2N3666.pdf2 Pages, 219 KB, Original
2N3666
Api Electronics, Inc.
Short form transistor data
1N3666LEADFREE.pdf1 Pages, 19 KB, Original
1N3666LEADFREE
Central Semiconductor Corp.
0.2 A, 80 V, GERMANIUM, SIGNAL DIODE, DO-7
1N3666TRLEADFREE.pdf1 Pages, 27 KB, Scan
1N3666TRLEADFREE
Central Semiconductor Corp.
0.2 A, 80 V, GERMANIUM, SIGNAL DIODE, DO-7
2N3666.pdf1 Pages, 462 KB, Original
2N3666
Central Semiconductor Corp.
80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
2N3666LEADFREE.pdf1 Pages, 33 KB, Original
2N3666LEADFREE
Central Semiconductor Corp.
80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
2N3666.pdf36 Pages, 3192 KB, Scan
2N3666
Crimson Semiconductor
Transistor Selection Guide
PN3666.pdf36 Pages, 3192 KB, Scan
PN3666
Crimson Semiconductor
Transistor Selection Guide
1N3666-1+JAN.pdf10 Pages, 258 KB, Scan
1N3666-1+JAN
Defense Electronics Supply Center
70mA Iout, 80V Vrrm Fast Recovery Rectifier
1N3666-1+JANTX.pdf10 Pages, 258 KB, Scan
1N3666-1+JANTX
Defense Electronics Supply Center
70mA Iout, 80V Vrrm Fast Recovery Rectifier
1N3666-1+JANTXV.pdf10 Pages, 258 KB, Scan
1N3666-1+JANTXV
Defense Electronics Supply Center
70mA Iout, 80V Vrrm Fast Recovery Rectifier

Product Details Search Results:

Apitech.com/2N3666
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Transistor Polarity":"NPN","Terminal Form":"WIRE","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"100","Collector-emitter Voltage-Max":"80 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"80 MHz","Collector Current-Max (IC)":"2 A","Case Connection":"COLLECTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Configuration":"SINGLE",...
1244 Bytes - 20:29:38, 07 March 2025
Centralsemi.com/1N3666LEADFREE
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"MATTE TIN (315)","Package Body Material":"PLASTIC/EPOXY","Terminal Form":"WIRE","Package Style":"LONG FORM","Rep Pk Reverse Voltage-Max":"80 V","Diode Element Material":"GERMANIUM","Average Forward Current-Max":"0.2000 A","Case Connection":"ISOLATED","EU RoHS Compliant":"Yes","Terminal Position":"AXIAL","Diode Type":"SIGNAL DIODE","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"2","Reverse Recovery Time-Max":"0.3000 us","Number ...
1259 Bytes - 20:29:38, 07 March 2025
Centralsemi.com/1N3666TRLEADFREE
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"MATTE TIN (315)","Package Body Material":"PLASTIC/EPOXY","Terminal Form":"WIRE","Package Style":"LONG FORM","Rep Pk Reverse Voltage-Max":"80 V","Diode Element Material":"GERMANIUM","Average Forward Current-Max":"0.2000 A","Case Connection":"ISOLATED","EU RoHS Compliant":"Yes","Terminal Position":"AXIAL","Diode Type":"SIGNAL DIODE","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"2","Reverse Recovery Time-Max":"0.3000 us","Number ...
1271 Bytes - 20:29:38, 07 March 2025
Centralsemi.com/2N3666
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"TO-39, 3 PIN","Terminal Form":"WIRE","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"100","Collector-emitter Voltage-Max":"80 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"60 MHz","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL ...
1260 Bytes - 20:29:38, 07 March 2025
Centralsemi.com/2N3666LEADFREE
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"MATTE TIN (315)","Package Body Material":"METAL","Mfr Package Description":"TO-39, 3 PIN","Terminal Form":"WIRE","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"100","Collector-emitter Voltage-Max":"80 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"60 MHz","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration"...
1359 Bytes - 20:29:38, 07 March 2025
Dla.mil/1N3666-1+JAN
{"Semiconductor Material":"Germanium","V(FM) Max.(V) Forward Voltage":"1.0","Package":"DO-7","I(O) Max.(A) Output Current":"70m","@Temp. (°C) (Test Condition)":"70","@V(R) (V)(Test Condition)":"20","V(RRM)(V) Rep.Pk.Rev. Voltage":"80","Military":"Y","I(RM) Max.(A) Reverse Current":"10u","@I(FM) (A) (Test Condition)":"200m","Mil Number":"JAN1N3666-1","I(RM) Max.(A) Pk. Rev. Current":"150u"}...
930 Bytes - 20:29:38, 07 March 2025
Dla.mil/1N3666-1+JANTX
{"Semiconductor Material":"Germanium","V(FM) Max.(V) Forward Voltage":"1.0","Package":"DO-7","I(O) Max.(A) Output Current":"70m","@Temp. (°C) (Test Condition)":"70","@V(R) (V)(Test Condition)":"20","V(RRM)(V) Rep.Pk.Rev. Voltage":"80","Military":"Y","I(RM) Max.(A) Reverse Current":"10u","@I(FM) (A) (Test Condition)":"200m","Mil Number":"JANTX1N3666-1","I(RM) Max.(A) Pk. Rev. Current":"150u"}...
941 Bytes - 20:29:38, 07 March 2025
Dla.mil/1N3666-1+JANTXV
{"Semiconductor Material":"Germanium","V(FM) Max.(V) Forward Voltage":"1.0","Package":"DO-7","I(O) Max.(A) Output Current":"70m","@Temp. (°C) (Test Condition)":"70","@V(R) (V)(Test Condition)":"20","V(RRM)(V) Rep.Pk.Rev. Voltage":"80","Military":"Y","I(RM) Max.(A) Reverse Current":"10u","@I(FM) (A) (Test Condition)":"200m","Mil Number":"JANTXV1N3666-1","I(RM) Max.(A) Pk. Rev. Current":"150u"}...
946 Bytes - 20:29:38, 07 March 2025
Dla.mil/1N3666-2+JAN
{"@Temp. (°C) (Test Condition)":"70","t(rr) Max.(s) Rev.Rec. Time":"300n","Semiconductor Material":"Germanium","V(FM) Max.(V) Forward Voltage":"1.0","Package":"DO-7","I(O) Max.(A) Output Current":"200m","I(RM) Max.(A) Reverse Current":"10u","@V(R) (V)(Test Condition)":"20","V(RRM)(V) Rep.Pk.Rev. Voltage":"80","Military":"Y","@I(F) (A) (Test Condition)":"30","@I(FM) (A) (Test Condition)":"200m","Mil Number":"JAN1N3666-2","I(RM) Max.(A) Pk. Rev. Current":"150u"}...
1002 Bytes - 20:29:38, 07 March 2025
Dla.mil/1N3666-2+JANTX
{"@Temp. (°C) (Test Condition)":"70","t(rr) Max.(s) Rev.Rec. Time":"300n","Semiconductor Material":"Germanium","V(FM) Max.(V) Forward Voltage":"1.0","Package":"DO-7","I(O) Max.(A) Output Current":"200m","I(RM) Max.(A) Reverse Current":"10u","@V(R) (V)(Test Condition)":"20","V(RRM)(V) Rep.Pk.Rev. Voltage":"80","Military":"Y","@I(F) (A) (Test Condition)":"30","@I(FM) (A) (Test Condition)":"200m","Mil Number":"JANTX1N3666-2","I(RM) Max.(A) Pk. Rev. Current":"150u"}...
1014 Bytes - 20:29:38, 07 March 2025
Dla.mil/1N3666-2+JANTXV
{"@Temp. (°C) (Test Condition)":"70","t(rr) Max.(s) Rev.Rec. Time":"300n","Semiconductor Material":"Germanium","V(FM) Max.(V) Forward Voltage":"1.0","Package":"DO-7","I(O) Max.(A) Output Current":"200m","I(RM) Max.(A) Reverse Current":"10u","@V(R) (V)(Test Condition)":"20","V(RRM)(V) Rep.Pk.Rev. Voltage":"80","Military":"Y","@I(F) (A) (Test Condition)":"30","@I(FM) (A) (Test Condition)":"200m","Mil Number":"JANTXV1N3666-2","I(RM) Max.(A) Pk. Rev. Current":"150u"}...
1020 Bytes - 20:29:38, 07 March 2025
Dla.mil/1N3666+JAN
{"@Temp. (°C) (Test Condition)":"70","I(RM) Max.(A) Pk. Rev. Current":"150u","t(rr) Max.(s) Rev.Rec. Time":"300n","Semiconductor Material":"Germanium","V(FM) Max.(V) Forward Voltage":"1.0","Package":"DO-7","I(O) Max.(A) Output Current":"200m","I(RM) Max.(A) Reverse Current":"10u","@V(R) (V)(Test Condition)":"20","V(RRM)(V) Rep.Pk.Rev. Voltage":"80","Military":"Y","@I(F) (A) (Test Condition)":"30m","@I(FM) (A) (Test Condition)":"200m","Mil Number":"JAN1N3666","@I(R) (A) (Test Condition)":"500u"}...
1027 Bytes - 20:29:38, 07 March 2025

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