Datasheet.Directory

{"t(s) Max. (s) Storage time.":"225n","V(CE)sat Max.(V)":"1.0","Absolute Max. Power Diss. (W)":"500m","V(BR)CBO (V)":"75","h(FE) Min. Static Current Gain":"100","I(C) Abs.(A) Collector Current":"800m","h(FE) Max. Current gain.":"300","@V(CBO) (V) (Test Condition)":"60","h(fe) Min. SS Current gain.":"3.0","I(CBO) Max. (A)":"10n","@Freq. (Hz) (Test Condition)":"100k","Package":"SMT","f(T) Min. (Hz) Transition Freq":"300M","@V(CE) (V) (Test Condition)":"20","@I(B) (A) (Test Condition)":"50m","V(BR)CEO (V)":"40...

{"t(s) Max. (s) Storage time.":"225n","V(CE)sat Max.(V)":"1.0","Absolute Max. Power Diss. (W)":"500m","V(BR)CBO (V)":"75","h(FE) Min. Static Current Gain":"100","I(C) Abs.(A) Collector Current":"800m","h(FE) Max. Current gain.":"300","@V(CBO) (V) (Test Condition)":"60","h(fe) Min. SS Current gain.":"3.0","I(CBO) Max. (A)":"10n","@Freq. (Hz) (Test Condition)":"100k","Package":"SMT","f(T) Min. (Hz) Transition Freq":"300M","@V(CE) (V) (Test Condition)":"20","@I(B) (A) (Test Condition)":"50m","V(BR)CEO (V)":"40...

{"t(s) Max. (s) Storage time.":"225n","V(CE)sat Max.(V)":"1.0","Absolute Max. Power Diss. (W)":"500m","V(BR)CBO (V)":"75","h(FE) Min. Static Current Gain":"100","I(C) Abs.(A) Collector Current":"800m","h(FE) Max. Current gain.":"300","@V(CBO) (V) (Test Condition)":"60","h(fe) Min. SS Current gain.":"3.0","I(CBO) Max. (A)":"10n","@Freq. (Hz) (Test Condition)":"100k","Package":"SMT","f(T) Min. (Hz) Transition Freq":"300M","@V(CE) (V) (Test Condition)":"20","@I(B) (A) (Test Condition)":"50m","V(BR)CEO (V)":"40...

{"Collector Current (DC) ":"0.8(A)","Transistor Polarity":"NPN","Category ":"Bipolar Power","Mounting":"Surface Mount","Emitter-Base Voltage":"6(V)","Rad Hardened":"No","Packaging":"Tray","Power Dissipation":"0.5(W)","Operating Temp Range":"-65C to 200C","Package Type":"UA","Collector-Base Voltage":"75(V)","DC Current Gain":"50","Output Power":"Not Required(W)","Configuration":"Single","Pin Count":"4","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"800mA","Transistor Type":"NPN","Frequency - Transition":"-","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"1V @ 50mA, 500mA","Series":"-","Package \/ Case":"4-SMD","Voltage - Collector Emitter Breakdown (Max)":"50V","Power - Max":"500mW","Packaging":"Bulk","Datasheets":"2N2221-22A","Current - Collector Cutoff (Max)":"50nA","Supplier Device Package":"4-SMD","Standard Package":"1","Mounting Type":"Surface M...

{"Collector Current (DC) ":"0.8 A","Transistor Polarity":"NPN","Collector-Emitter Voltage":"50 V","Mounting":"Surface Mount","Emitter-Base Voltage":"6 V","Rad Hardened":"No","Category ":"Bipolar Power","Operating Temperature Classification":"Military","Power Dissipation":"0.5 W","Operating Temp Range":"-65C to 200C","Package Type":"UA","Collector-Base Voltage":"75 V","DC Current Gain":"50","Pin Count":"4","Number of Elements":"1"}...

{"Collector Current (DC) ":"0.8(A)","Transistor Polarity":"NPN","Power Dissipation":"0.5(W)","Mounting":"Surface Mount","Emitter-Base Voltage":"6(V)","Operating Temp Range":"-65C to 200C","Category ":"Bipolar Power","Packaging":"Tray","Operating Temperature Classification":"Military","Rad Hardened":"No","Output Power":"Not Required(W)","Collector-Base Voltage":"75(V)","DC Current Gain":"50","Package Type":"UA","Configuration":"Single","Pin Count":"4","Number of Elements":"1"}...

{"Collector Current (DC) ":"0.8(A)","Transistor Polarity":"NPN","Power Dissipation":"0.5(W)","Operating Temperature Classification":"Military","Mounting":"Surface Mount","Emitter-Base Voltage":"6(V)","Rad Hardened":"No","Packaging":"Waffle","Category ":"Bipolar Power","Operating Temp Range":"-65C to 200C","Output Power":"Not Required(W)","Collector-Base Voltage":"75(V)","DC Current Gain":"50","Package Type":"UA","Configuration":"Single","Pin Count":"4","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"800mA","Transistor Type":"NPN","Frequency - Transition":"-","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"1V @ 50mA, 500mA","Series":"Military, MIL-PRF-19500\/255","Package \/ Case":"4-SMD","Voltage - Collector Emitter Breakdown (Max)":"50V","Power - Max":"500mW","Packaging":"Bulk","Datasheets":"2N2221-22A","Current - Collector Cutoff (Max)":"50nA","Supplier Device Package":"*","Standard Package":"1","Mo...

{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"30","Terminal Finish":"TIN LEAD","Package Body Material":"UNSPECIFIED","Transistor Polarity":"NPN","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"SMALL OUTLINE","Turn-on Time-Max (ton)":"35 ns","Turn-off Time-Max (toff)":"300 ns","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Type":"GENERAL ...

{"Terminal Finish":"TIN LEAD","Transistor Polarity":"NPN","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.5000 W","Collector Current-Max (IC)":"0.8000 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Turn-off Time-Max (toff)":"300 ns","Transistor Element Material":"SILICON","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Turn-on Time-Max (ton)":"35 ns","Collector-emitter Voltage-Max":"50 V","Transistor Applica...

{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"30","Terminal Finish":"NOT SPECIFIED","Package Body Material":"UNSPECIFIED","Transistor Polarity":"NPN","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.6500 W","Package Style":"SMALL OUTLINE","Turn-on Time-Max (ton)":"35 ns","Turn-off Time-Max (toff)":"300 ns","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Type":"GEN...

{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"30","Turn-off Time-Max (toff)":"300 ns","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"CERAMIC PACKAGE-4","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.6500 W","Package Style":"SMALL OUTLINE","Turn-on Time-Max (ton)":"35 ns","Collector Current-Max (IC)":"0.8000 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","Termin...

{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"30","Terminal Finish":"NOT SPECIFIED","Package Body Material":"UNSPECIFIED","Transistor Polarity":"NPN","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.6500 W","Package Style":"SMALL OUTLINE","Turn-on Time-Max (ton)":"35 ns","Turn-off Time-Max (toff)":"300 ns","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Type":"GEN...

{"Terminal Finish":"NOT SPECIFIED","Transistor Polarity":"NPN","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.6500 W","Collector Current-Max (IC)":"0.8000 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Turn-off Time-Max (toff)":"300 ns","Transistor Element Material":"SILICON","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Turn-on Time-Max (ton)":"35 ns","Collector-emitter Voltage-Max":"50 V","Transistor Ap...

{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"30","Terminal Finish":"NOT SPECIFIED","Package Body Material":"UNSPECIFIED","Transistor Polarity":"NPN","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.6500 W","Package Style":"SMALL OUTLINE","Turn-on Time-Max (ton)":"35 ns","Turn-off Time-Max (toff)":"300 ns","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Type":"GEN...

{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"30","Terminal Finish":"NOT SPECIFIED","Package Body Material":"UNSPECIFIED","Transistor Polarity":"NPN","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.6500 W","Package Style":"SMALL OUTLINE","Turn-on Time-Max (ton)":"35 ns","Turn-off Time-Max (toff)":"300 ns","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Type":"GEN...

{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"30","Turn-off Time-Max (toff)":"300 ns","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"CERAMIC PACKAGE-4","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.6500 W","Package Style":"SMALL OUTLINE","Turn-on Time-Max (ton)":"35 ns","Collector Current-Max (IC)":"0.8000 A","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","Termin...

{"Status":"ACTIVE","DC Current Gain-Min (hFE)":"30","Terminal Finish":"NOT SPECIFIED","Package Body Material":"UNSPECIFIED","Transistor Polarity":"NPN","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.6500 W","Package Style":"SMALL OUTLINE","Turn-on Time-Max (ton)":"35 ns","Turn-off Time-Max (toff)":"300 ns","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Type":"GEN...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"800mA","Frequency - Transition":"-","Transistor Type":"NPN","Product Photos":"JANTX2N4xxx","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"1V @ 50mA, 500mA","Series":"Military, MIL-PRF-19500\/255","Package \/ Case":"TO-206AA, TO-18-3 Metal Can","Voltage - Collector Emitter Breakdown (Max)":"50V","Power - Max":"500mW","Packaging":"Bulk","Datasheets":"2N2221-22A","Current - Collector Cutoff (Max)":"50nA","Su...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"800mA","Online Catalog":"NPN Transistors","Transistor Type":"NPN","Frequency - Transition":"-","Product Photos":"JANTXV2N2222AUA","Vce Saturation (Max) @ Ib, Ic":"1V @ 50mA, 500mA","Current - Collector Cutoff (Max)":"50nA","Series":"Military, MIL-PRF-19500\/255","Standard Package":"1","Voltage - Collector Emitter Breakdown (Max)":"50V","Supplier Device Package":"4-SMD","Packaging":"Bulk","Datasheets":"2N2221-22A","Power - Max":"...

{"Packaging":"Waffle","Collector-Emitter Saturation Voltage":"1 V","Product Category":"Bipolar Transistors - BJT","Transistor Polarity":"NPN","Brand":"Optek \/ TT Electronics","Mounting Style":"SMD\/SMT","Collector- Emitter Voltage VCEO Max":"50 V","Emitter- Base Voltage VEBO":"6 V","Collector- Base Voltage VCBO":"75 V","Minimum Operating Temperature":"- 65 C","Pd - Power Dissipation":"0.5 W","Configuration":"Single","Maximum Operating Temperature":"+ 150 C","RoHS":"In Transition","Manufacturer":"TT Electro...

{"Category":"Bipolar Power","Dimensions":"5.72 x 3.94 x 1.91 mm","Maximum Collector Emitter Saturation Voltage":"1 V","Transistor Material":"Si","Width":"3.94 mm","Package Type":"SOT-23","Number of Elements per Chip":"1","Configuration":"Common Base","Maximum Operating Temperature":"+200 \u00b0C","Transistor Type":"NPN","Maximum Collector Base Voltage":"75 V","Operating Temperature Range":"-65 to +200 \u00b0C","Maximum Base Emitter Saturation Voltage":"2 V","Maximum Emitter Base Voltage":"6 V","Length":"5.7...

{"Category":"Bipolar Power","Dimensions":"5.72 x 3.94 x 1.91 mm","Maximum Collector Emitter Saturation Voltage":"1 V","Transistor Material":"Si","Width":"3.94 mm","Package Type":"SOT-23","Number of Elements per Chip":"1","Configuration":"Common Base","Maximum Operating Temperature":"+200 \u00b0C","Transistor Type":"NPN","Maximum Collector Base Voltage":"75 V","Operating Temperature Range":"-65 to +200 \u00b0C","Maximum Base Emitter Saturation Voltage":"2 V","Maximum Emitter Base Voltage":"6 V","Length":"5.7...

{"Category":"Bipolar Power","Dimensions":"5.72 x 3.94 x 1.91 mm","Maximum Collector Emitter Saturation Voltage":"1 V","Transistor Material":"Si","Width":"3.94 mm","Package Type":"SOT-23","Number of Elements per Chip":"1","Configuration":"Common Base","Maximum Operating Temperature":"+200 \u00b0C","Transistor Type":"NPN","Maximum Collector Base Voltage":"75 V","Operating Temperature Range":"-65 to +200 \u00b0C","Maximum Base Emitter Saturation Voltage":"2 V","Maximum Emitter Base Voltage":"6 V","Length":"5.7...

{"Collector Current (DC) ":"0.8 A","Transistor Polarity":"NPN","Collector-Emitter Voltage":"50 V","Rad Hardened":"No","Mounting":"Surface Mount","Emitter-Base Voltage":"6 V","Category ":"Bipolar Power","Operating Temperature Classification":"Military","Power Dissipation":"0.5 W","Operating Temp Range":"-65C to 200C","Package Type":"UA","Collector-Base Voltage":"75 V","DC Current Gain":"50","Pin Count":"4","Number of Elements":"1"}...

{"Rad Hardened":"No"}...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"800mA","Online Catalog":"NPN Transistors","Transistor Type":"NPN","Frequency - Transition":"-","Product Photos":"4-CLCC","Vce Saturation (Max) @ Ib, Ic":"1V @ 50mA, 500mA","Power - Max":"500mW","Series":"-","Standard Package":"1","Supplier Device Package":"Ceramic SMD","PCN Design\/Specification":"Transistor Die Change 20\/Jun\/2014","Packaging":"Bulk","Datasheets":"2N2222AUA Datasheet","Current - Collector Cutoff (Max)":"50nA",...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"800mA","Frequency - Transition":"-","Transistor Type":"NPN","Product Photos":"4-CLCC","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"300mV @ 15mA, 150mA","Supplier Device Package":"4-CLCC (5.59x3.81)","Series":"-","Package \/ Case":"4-CLCC","PCN Design\/Specification":"Transistor Die Change 20\/Jun\/2014","Voltage - Collector Emitter Breakdown (Max)":"50V","Packaging":"Bulk","Datasheets":"2N2222AUA Datash...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"800mA","Frequency - Transition":"-","Transistor Type":"NPN","Product Photos":"4-CLCC","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"300mV @ 15mA, 150mA","Supplier Device Package":"4-CLCC (5.59x3.81)","Series":"-","Package \/ Case":"4-CLCC","PCN Design\/Specification":"Transistor Die Change 20\/Jun\/2014","Voltage - Collector Emitter Breakdown (Max)":"50V","Packaging":"Bulk","Datasheets":"2N2222AUA Datash...