Product Datasheet Search Results:

2N3637UB.pdf1 Pages, 243 KB, Scan
2N3637UB
Crystalonics
1000 mA, 175 V, PNP, Si, SMALL SIGNAL TRANSISTOR
GRP-DATA-JANS2N3637UB.pdf5 Pages, 170 KB, Original
GRP-DATA-JANS2N3637UB
Microchip Technology
Trans GP BJT PNP 175V 1A 1000mW 4-Pin Case UB Waffle
JANS2N3637UBR.pdf5 Pages, 170 KB, Original
JANS2N3637UBR
Microchip Technology
Trans GP BJT PNP 175V 1A 1000mW 4-Pin Case UB
JANTXV2N3637UB.pdf5 Pages, 170 KB, Original
JANTXV2N3637UB
Microchip Technology
Trans GP BJT PNP 175V 1A 1000mW 4-Pin Case UB Waffle
2N3637UB.pdf5 Pages, 170 KB, Original
2N3637UB
Microsemi Corp.
1000 mA, 175 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2N3637UBJANTX.pdf5 Pages, 170 KB, Original
2N3637UBJANTX
Microsemi
Trans GP BJT PNP 175V 1A 3-Pin UB

Product Details Search Results:

Crystalonics.com/2N3637UB
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"SURFACE MOUNT PACKAGE-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"1 W","Package Style":"CHIP CARRIER","DC Current Gain-Min (hFE)":"90","Collector Current-Max (IC)":"1 A","Collector-emitter Voltage-Max":"175 V","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"PNP","Package Shape":"SQUARE...
1313 Bytes - 23:25:42, 23 September 2024
Microchip.com/2N3637UB
709 Bytes - 23:25:42, 23 September 2024
Microchip.com/GRP-DATA-JANS2N3637UB
{"Collector Current (DC) ":"1(A)","Transistor Polarity":"PNP","Category ":"Bipolar Power","Mounting":"Surface Mount","Emitter-Base Voltage":"5(V)","Rad Hardened":"No","Packaging":"Waffle","Power Dissipation":"1(W)","Operating Temp Range":"-65C to 200C","Output Power":"Not Required(W)","Collector-Base Voltage":"175(V)","DC Current Gain":"55","Package Type":"CASE UB","Configuration":"Single","Pin Count":"4","Number of Elements":"1"}...
1534 Bytes - 23:25:42, 23 September 2024
Microchip.com/JANS2N3637UBR
1077 Bytes - 23:25:42, 23 September 2024
Microchip.com/JANTXV2N3637UB
1065 Bytes - 23:25:42, 23 September 2024
Microsemi.com/2N3637UB
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"1A","Online Catalog":"PNP Transistors","Frequency - Transition":"-","Transistor Type":"PNP","Product Photos":"2N3637UB","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"600mV @ 5mA, 50mA","Series":"-","Package \/ Case":"3-SMD, No Lead","Voltage - Collector Emitter Breakdown (Max)":"175V","Power - Max":"1W","Packaging":"Bulk","Datasheets":"2N3634-37(L,UB)","Current - Collector Cutoff (Max)":"10\u00b5A","Supp...
1736 Bytes - 23:25:42, 23 September 2024
Microsemi.com/2N3637UBJANTX
{"Collector Current (DC) ":"1 A","Transistor Polarity":"PNP","Power Dissipation":"1 W","Mounting":"Surface Mount","Emitter-Base Voltage":"5 V","Collector-Emitter Voltage":"175 V","Rad Hardened":"No","Category ":"Bipolar Power","Operating Temperature Classification":"Military","Operating Temp Range":"-65C to 200C","Package Type":"UB","Collector-Base Voltage":"175 V","DC Current Gain":"55","Pin Count":"3"}...
1413 Bytes - 23:25:42, 23 September 2024
Microsemi.com/GRP-DATA-JANS2N3637UB
{"Collector Current (DC) ":"1(A)","Transistor Polarity":"PNP","Power Dissipation":"1(W)","Mounting":"Surface Mount","Emitter-Base Voltage":"5(V)","Rad Hardened":"No","Category ":"Bipolar Power","Packaging":"Waffle","Operating Temperature Classification":"Military","Operating Temp Range":"-65C to 200C","Package Type":"CASE UB","Collector-Base Voltage":"175(V)","DC Current Gain":"55","Output Power":"Not Required(W)","Configuration":"Single","Pin Count":"4","Number of Elements":"1"}...
1544 Bytes - 23:25:42, 23 September 2024
Microsemi.com/JAN2N3637UB
{"Terminal Finish":"TIN LEAD","Transistor Polarity":"PNP","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"1 W","Collector Current-Max (IC)":"1 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Turn-off Time-Max (toff)":"650 ns","Transistor Element Material":"SILICON","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Turn-on Time-Max (ton)":"200 ns","Collector-emitter Voltage-Max":"175 V","Transistor Application":"S...
1431 Bytes - 23:25:42, 23 September 2024
Microsemi.com/JANS2N3637UB
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"1A","Transistor Type":"PNP","Frequency - Transition":"-","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"600mV @ 5mA, 50mA","Series":"Military, MIL-PRF-19500\/357","Package \/ Case":"*","Voltage - Collector Emitter Breakdown (Max)":"175V","Power - Max":"1.5W","Packaging":"*","Datasheets":"2N3634(L,UB) - 3637(L,UB)","Current - Collector Cutoff (Max)":"10\u00b5A","Supplier Device Package":"*","Standard Packa...
1464 Bytes - 23:25:42, 23 September 2024
Microsemi.com/JANS2N3637UBR
{"Collector Current (DC) ":"1(A)","Transistor Polarity":"PNP","Operating Temperature Classification":"Military","Mounting":"Surface Mount","Emitter-Base Voltage":"5(V)","Rad Hardened":"No","Power Dissipation":"1(W)","Category ":"Bipolar Power","Operating Temp Range":"-65C to 200C","Package Type":"CASE UB","Collector-Base Voltage":"175(V)","DC Current Gain":"55","Output Power":"Not Required(W)","Configuration":"Single","Pin Count":"4","Number of Elements":"1"}...
1501 Bytes - 23:25:42, 23 September 2024
Microsemi.com/JANSD2N3637UB
{"Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Terminal Form":"NO LEAD","Package Style":"SMALL OUTLINE","Terminal Position":"DUAL","Package Shape":"RECTANGULAR","Number of Terminals":"3","Surface Mount":"Yes"}...
951 Bytes - 23:25:42, 23 September 2024