Product Datasheet Search Results:

2N3749.pdf5 Pages, 295 KB, Scan
2N3749
Api Electronics Group
5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-111
2N3749.pdf1 Pages, 55 KB, Original
2N3749
Api Electronics, Inc.
Short form transistor data
2N3749JAN.pdf2 Pages, 218 KB, Original
2N3749JAN
Api Electronics, Inc.
Short form transistor data
2N3749JTX.pdf2 Pages, 218 KB, Original
2N3749JTX
Api Electronics, Inc.
Short form transistor data
2N3749JTXV.pdf2 Pages, 218 KB, Original
JAN2N3749.pdf2 Pages, 218 KB, Original
JTX2N3749.pdf2 Pages, 218 KB, Original
JTXV2N3749.pdf2 Pages, 218 KB, Original
2N3749.pdf1 Pages, 63 KB, Original

Product Details Search Results:

Apitech.com/2N3749
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Transistor Polarity":"NPN","Terminal Form":"SOLDER LUG","Package Style":"POST/STUD MOUNT","DC Current Gain-Min (hFE)":"40","Collector-emitter Voltage-Max":"80 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"60 MHz","Collector Current-Max (IC)":"5 A","Case Connection":"ISOLATED","Terminal Position":"UPPER","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE",...
1234 Bytes - 22:14:41, 14 October 2024
Dla.mil/2N3749+JAN
{"t(s) Max. (s) Storage time.":"60n","Absolute Max. Power Diss. (W)":"30","V(BR)CBO (V)":"100","h(FE) Min. Static Current Gain":"40","I(C) Abs.(A) Collector Current":"5.0","h(FE) Max. Current gain.":"120","I(CBO) Max. (A)":"100n","Package":"TO-111","@V(CE) (V) (Test Condition)":"5.0","f(T) Min. (Hz) Transition Freq":"40M","V(BR)CEO (V)":"80","Military":"Y","Mil Number":"JAN2N3749","@I(C) (A) (Test Condition)":"1.0","t(r) Max. (s) Rise time":"80n","t(f) Max. (s) Fall time.":"80n"}...
993 Bytes - 22:14:41, 14 October 2024
Dla.mil/2N3749+JANTX
{"t(s) Max. (s) Storage time.":"60n","Absolute Max. Power Diss. (W)":"30","V(BR)CBO (V)":"100","h(FE) Min. Static Current Gain":"40","I(C) Abs.(A) Collector Current":"5.0","h(FE) Max. Current gain.":"120","I(CBO) Max. (A)":"100n","Package":"TO-111","@V(CE) (V) (Test Condition)":"5.0","f(T) Min. (Hz) Transition Freq":"40M","V(BR)CEO (V)":"80","Military":"Y","Mil Number":"JANTX2N3749","@I(C) (A) (Test Condition)":"1.0","t(r) Max. (s) Rise time":"80n","t(f) Max. (s) Fall time.":"80n"}...
1005 Bytes - 22:14:41, 14 October 2024
Dla.mil/2N3749+JANTXV
{"t(s) Max. (s) Storage time.":"60n","Absolute Max. Power Diss. (W)":"30","V(BR)CBO (V)":"100","h(FE) Min. Static Current Gain":"40","I(C) Abs.(A) Collector Current":"5.0","h(FE) Max. Current gain.":"120","I(CBO) Max. (A)":"100n","Package":"TO-111","@V(CE) (V) (Test Condition)":"5.0","f(T) Min. (Hz) Transition Freq":"40M","V(BR)CEO (V)":"80","Military":"Y","Mil Number":"JANTXV2N3749","@I(C) (A) (Test Condition)":"1.0","t(r) Max. (s) Rise time":"80n","t(f) Max. (s) Fall time.":"80n"}...
1011 Bytes - 22:14:41, 14 October 2024
Microchip.com/TC52N3749ECT
{"Terminal Finish":"MATTE TIN","Terminal Pitch":"0.9500 mm","Terminal Form":"GULL WING","Operating Temperature-Max":"85 Cel","Supply Voltage-Nom (Vsup)":"2 V","Temperature Grade":"INDUSTRIAL","Analog IC - Other Type":"POWER SUPPLY SUPPORT CKT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Operating Temperature-Min":"-40 Cel","Package Body Material":"PLASTIC/EPOXY","Number of Channels":"2","Number of Functions":"1","EU RoHS Compliant":"Yes","Supply Voltage-Max (Vsup)":"10 V","China RoHS ...
1492 Bytes - 22:14:41, 14 October 2024
Microchip.com/TC52N3749ECTTR
{"Terminal Finish":"MATTE TIN","Terminal Pitch":"0.9500 mm","Terminal Form":"GULL WING","Operating Temperature-Max":"85 Cel","Supply Voltage-Nom (Vsup)":"2 V","Temperature Grade":"INDUSTRIAL","Analog IC - Other Type":"POWER SUPPLY SUPPORT CKT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Operating Temperature-Min":"-40 Cel","Package Body Material":"PLASTIC/EPOXY","Number of Channels":"2","Number of Functions":"1","EU RoHS Compliant":"Yes","Supply Voltage-Max (Vsup)":"10 V","China RoHS ...
1506 Bytes - 22:14:41, 14 October 2024
Microsemi.com/2N3749
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Transistor Polarity":"PNP","Terminal Form":"UNSPECIFIED","Power Dissipation Ambient-Max":"2 W","Package Style":"POST/STUD MOUNT","DC Current Gain-Min (hFE)":"15","Collector-emitter Voltage-Max":"80 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"5 A","Case Connection":"ISOLATED","Terminal Position":"UPPER","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number...
1216 Bytes - 22:14:41, 14 October 2024
Microsemi.com/2N3749JANTXV
{"Collector Current (DC) ":"5 A","Transistor Polarity":"NPN","Collector Current (DC) (Max)":"5 A","Collector-Emitter Voltage":"80 V","Mounting":"Stud","Emitter-Base Voltage":"8 V","Rad Hardened":"No","DC Current Gain (Min)":"40","Category ":"Bipolar Power","Operating Temperature Classification":"Military","Power Dissipation":"2 W","Operating Temp Range":"-65C to 200C","Package Type":"TO-59","Output Power (Max)":"Not Required W","DC Current Gain":"40","Emitter-Base Voltage (Max)":"8 V","Collector-Base Voltag...
1613 Bytes - 22:14:41, 14 October 2024
Microsemi.com/JAN2N3749
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Transistor Polarity":"NPN","Terminal Form":"SOLDER LUG","Power Dissipation Ambient-Max":"2 W","Package Style":"POST/STUD MOUNT","DC Current Gain-Min (hFE)":"15","Collector-emitter Voltage-Max":"80 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"20 MHz","Collector Current-Max (IC)":"5 A","Transistor Element Material":"SILICON","Terminal Position":"UPPER","Transistor Type":"GENERAL PURPOSE POWER","Package...
1287 Bytes - 22:14:41, 14 October 2024
Microsemi.com/JANTX2N3749
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Transistor Polarity":"PNP","Terminal Form":"UNSPECIFIED","Power Dissipation Ambient-Max":"2 W","Package Style":"POST/STUD MOUNT","DC Current Gain-Min (hFE)":"15","Collector-emitter Voltage-Max":"80 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"5 A","Case Connection":"ISOLATED","Terminal Position":"UPPER","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number...
1248 Bytes - 22:14:41, 14 October 2024
Microsemi.com/JANTXV2N3749
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Transistor Polarity":"PNP","Terminal Form":"UNSPECIFIED","Power Dissipation Ambient-Max":"2 W","Package Style":"POST/STUD MOUNT","DC Current Gain-Min (hFE)":"15","Collector-emitter Voltage-Max":"80 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"5 A","Case Connection":"ISOLATED","Terminal Position":"UPPER","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number...
1254 Bytes - 22:14:41, 14 October 2024
N_a/2N3749
{"Category":"NPN Transistor, Transistor","Amps":"5A","MHz":">40 MHz","Volts":"100V"}...
516 Bytes - 22:14:41, 14 October 2024