Product Datasheet Search Results:
- 2N3749
- Api Electronics Group
- 5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-111
- 2N3749
- Api Electronics, Inc.
- Short form transistor data
- 2N3749JAN
- Api Electronics, Inc.
- Short form transistor data
- 2N3749JTX
- Api Electronics, Inc.
- Short form transistor data
- 2N3749JTXV
- Api Electronics, Inc.
- Short form transistor data
- JAN2N3749
- Api Electronics, Inc.
- 5 Amp NPN Transistors
- JTX2N3749
- Api Electronics, Inc.
- 5 Amp NPN Transistors
- JTXV2N3749
- Api Electronics, Inc.
- 5 Amp NPN Transistors
- 2N3749
- Diode Transistor Co., Inc.
- Transistor Short Form Data
Product Details Search Results:
Apitech.com/2N3749
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Transistor Polarity":"NPN","Terminal Form":"SOLDER LUG","Package Style":"POST/STUD MOUNT","DC Current Gain-Min (hFE)":"40","Collector-emitter Voltage-Max":"80 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"60 MHz","Collector Current-Max (IC)":"5 A","Case Connection":"ISOLATED","Terminal Position":"UPPER","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE",...
1234 Bytes - 14:07:20, 22 December 2024
Dla.mil/2N3749+JAN
{"t(s) Max. (s) Storage time.":"60n","Absolute Max. Power Diss. (W)":"30","V(BR)CBO (V)":"100","h(FE) Min. Static Current Gain":"40","I(C) Abs.(A) Collector Current":"5.0","h(FE) Max. Current gain.":"120","I(CBO) Max. (A)":"100n","Package":"TO-111","@V(CE) (V) (Test Condition)":"5.0","f(T) Min. (Hz) Transition Freq":"40M","V(BR)CEO (V)":"80","Military":"Y","Mil Number":"JAN2N3749","@I(C) (A) (Test Condition)":"1.0","t(r) Max. (s) Rise time":"80n","t(f) Max. (s) Fall time.":"80n"}...
993 Bytes - 14:07:20, 22 December 2024
Dla.mil/2N3749+JANTX
{"t(s) Max. (s) Storage time.":"60n","Absolute Max. Power Diss. (W)":"30","V(BR)CBO (V)":"100","h(FE) Min. Static Current Gain":"40","I(C) Abs.(A) Collector Current":"5.0","h(FE) Max. Current gain.":"120","I(CBO) Max. (A)":"100n","Package":"TO-111","@V(CE) (V) (Test Condition)":"5.0","f(T) Min. (Hz) Transition Freq":"40M","V(BR)CEO (V)":"80","Military":"Y","Mil Number":"JANTX2N3749","@I(C) (A) (Test Condition)":"1.0","t(r) Max. (s) Rise time":"80n","t(f) Max. (s) Fall time.":"80n"}...
1005 Bytes - 14:07:20, 22 December 2024
Dla.mil/2N3749+JANTXV
{"t(s) Max. (s) Storage time.":"60n","Absolute Max. Power Diss. (W)":"30","V(BR)CBO (V)":"100","h(FE) Min. Static Current Gain":"40","I(C) Abs.(A) Collector Current":"5.0","h(FE) Max. Current gain.":"120","I(CBO) Max. (A)":"100n","Package":"TO-111","@V(CE) (V) (Test Condition)":"5.0","f(T) Min. (Hz) Transition Freq":"40M","V(BR)CEO (V)":"80","Military":"Y","Mil Number":"JANTXV2N3749","@I(C) (A) (Test Condition)":"1.0","t(r) Max. (s) Rise time":"80n","t(f) Max. (s) Fall time.":"80n"}...
1011 Bytes - 14:07:20, 22 December 2024
Microchip.com/TC52N3749ECT
{"Terminal Finish":"MATTE TIN","Terminal Pitch":"0.9500 mm","Terminal Form":"GULL WING","Operating Temperature-Max":"85 Cel","Supply Voltage-Nom (Vsup)":"2 V","Temperature Grade":"INDUSTRIAL","Analog IC - Other Type":"POWER SUPPLY SUPPORT CKT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Operating Temperature-Min":"-40 Cel","Package Body Material":"PLASTIC/EPOXY","Number of Channels":"2","Number of Functions":"1","EU RoHS Compliant":"Yes","Supply Voltage-Max (Vsup)":"10 V","China RoHS ...
1492 Bytes - 14:07:20, 22 December 2024
Microchip.com/TC52N3749ECTTR
{"Terminal Finish":"MATTE TIN","Terminal Pitch":"0.9500 mm","Terminal Form":"GULL WING","Operating Temperature-Max":"85 Cel","Supply Voltage-Nom (Vsup)":"2 V","Temperature Grade":"INDUSTRIAL","Analog IC - Other Type":"POWER SUPPLY SUPPORT CKT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Operating Temperature-Min":"-40 Cel","Package Body Material":"PLASTIC/EPOXY","Number of Channels":"2","Number of Functions":"1","EU RoHS Compliant":"Yes","Supply Voltage-Max (Vsup)":"10 V","China RoHS ...
1506 Bytes - 14:07:20, 22 December 2024
Microsemi.com/2N3749
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Transistor Polarity":"PNP","Terminal Form":"UNSPECIFIED","Power Dissipation Ambient-Max":"2 W","Package Style":"POST/STUD MOUNT","DC Current Gain-Min (hFE)":"15","Collector-emitter Voltage-Max":"80 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"5 A","Case Connection":"ISOLATED","Terminal Position":"UPPER","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number...
1216 Bytes - 14:07:20, 22 December 2024
Microsemi.com/2N3749JANTXV
{"Collector Current (DC) ":"5 A","Transistor Polarity":"NPN","Collector Current (DC) (Max)":"5 A","Collector-Emitter Voltage":"80 V","Mounting":"Stud","Emitter-Base Voltage":"8 V","Rad Hardened":"No","DC Current Gain (Min)":"40","Category ":"Bipolar Power","Operating Temperature Classification":"Military","Power Dissipation":"2 W","Operating Temp Range":"-65C to 200C","Package Type":"TO-59","Output Power (Max)":"Not Required W","DC Current Gain":"40","Emitter-Base Voltage (Max)":"8 V","Collector-Base Voltag...
1613 Bytes - 14:07:20, 22 December 2024
Microsemi.com/JAN2N3749
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Transistor Polarity":"NPN","Terminal Form":"SOLDER LUG","Power Dissipation Ambient-Max":"2 W","Package Style":"POST/STUD MOUNT","DC Current Gain-Min (hFE)":"15","Collector-emitter Voltage-Max":"80 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"20 MHz","Collector Current-Max (IC)":"5 A","Transistor Element Material":"SILICON","Terminal Position":"UPPER","Transistor Type":"GENERAL PURPOSE POWER","Package...
1287 Bytes - 14:07:20, 22 December 2024
Microsemi.com/JANTX2N3749
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Transistor Polarity":"PNP","Terminal Form":"UNSPECIFIED","Power Dissipation Ambient-Max":"2 W","Package Style":"POST/STUD MOUNT","DC Current Gain-Min (hFE)":"15","Collector-emitter Voltage-Max":"80 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"5 A","Case Connection":"ISOLATED","Terminal Position":"UPPER","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number...
1248 Bytes - 14:07:20, 22 December 2024
Microsemi.com/JANTXV2N3749
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Transistor Polarity":"PNP","Terminal Form":"UNSPECIFIED","Power Dissipation Ambient-Max":"2 W","Package Style":"POST/STUD MOUNT","DC Current Gain-Min (hFE)":"15","Collector-emitter Voltage-Max":"80 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"5 A","Case Connection":"ISOLATED","Terminal Position":"UPPER","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number...
1254 Bytes - 14:07:20, 22 December 2024
N_a/2N3749
{"Category":"NPN Transistor, Transistor","Amps":"5A","MHz":">40 MHz","Volts":"100V"}...
516 Bytes - 14:07:20, 22 December 2024
Documentation and Support
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