Datasheet.Directory

{"Status":"ACTIVE","Collector-base Capacitance-Max":"3.5 pF","Package Body Material":"METAL","Mfr Package Description":"TO-39, 3 PIN","Terminal Form":"WIRE","Package Style":"CYLINDRICAL","Collector-emitter Voltage-Max":"20 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"1200 MHz","Highest Frequency Band":"VERY HIGH FREQUENCY BAND","Collector Current-Max (IC)":"0.4000 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"400mA","Online Catalog":"NPN RF Transistors","Noise Figure (dB Typ @ f)":"3dB @ 200MHz","Transistor Type":"NPN","Family":"RF Transistors (BJT)","Product Photos":"TO-205AD TO-39-3 2N3019","Frequency - Transition":"1.2GHz","Series":"-","Standard Package":"500","Voltage - Collector Emitter Breakdown (Max)":"20V","Supplier Device Package":"TO-39","Packaging":"Bulk","Datasheets":"2N5109","Power - Max":"1W","RoHS Information":"RoHS De...

{"Terminal Finish":"MATTE TIN (315)","Transistor Polarity":"NPN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"1 W","Collector Current-Max (IC)":"0.4000 A","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Collector-emitter Voltage-Max":"20 V","Terminal Position":"BOTTOM","Transistor Application":"AMPLIFIER","Collector-base Capaci...

{"Status":"ACTIVE","Collector-base Capacitance-Max":"3.5 pF","Number of Elements":"1","Mfr Package Description":"0.016 X 0.016 INCH, 0.007 INCH HEIGHT, DIE","Power Dissipation Ambient-Max":"1 W","Collector-emitter Voltage-Max":"20 V","Transistor Element Material":"SILICON","Highest Frequency Band":"VERY HIGH FREQUENCY BAND","Collector Current-Max (IC)":"0.4000 A","Transition Frequency-Nom (fT)":"1200 MHz","Transistor Polarity":"NPN","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Transistor Ap...

{"@I(C) (A) (Test Condition)":"50m","Absolute Max. Power Diss. (W)":"2.5","I(C) Abs.(A) Collector Current":"500m","h(FE) Max. Current gain.":"120","@V(CE) (V) (Test Condition)":"15","f(T) Min. (Hz) Transition Freq":"1.2G","V(BR)CEO (V)":"20","Package":"TO-39","h(FE) Min. Static Current Gain":"40","Military":"Y","Mil Number":"JAN2N5109"}...

{"@I(C) (A) (Test Condition)":"50m","Absolute Max. Power Diss. (W)":"2.5","I(C) Abs.(A) Collector Current":"500m","h(FE) Max. Current gain.":"120","@V(CE) (V) (Test Condition)":"15","f(T) Min. (Hz) Transition Freq":"1.2G","V(BR)CEO (V)":"20","Package":"TO-39","h(FE) Min. Static Current Gain":"40","Military":"Y","Mil Number":"JANTX2N5109"}...

{"@I(C) (A) (Test Condition)":"50m","Absolute Max. Power Diss. (W)":"2.5","I(C) Abs.(A) Collector Current":"500m","h(FE) Max. Current gain.":"120","@V(CE) (V) (Test Condition)":"15","f(T) Min. (Hz) Transition Freq":"1.2G","V(BR)CEO (V)":"20","Package":"TO-39","h(FE) Min. Static Current Gain":"40","Military":"Y","Mil Number":"JANTXV2N5109"}...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"400mA","Noise Figure (dB Typ @ f)":"-","Transistor Type":"NPN","Frequency - Transition":"1.2GHz","Family":"RF Transistors (BJT)","Series":"-","Standard Package":"1,000","Voltage - Collector Emitter Breakdown (Max)":"20V","Supplier Device Package":"TO-39","Packaging":"Bulk","Datasheets":"2N5109","Power - Max":"2.5W","Gain":"12dB","Package / Case":"TO-205AD, TO-39-3 Metal Can","Mounting Type":"Through Hole","DC Current Gain (hFE) ...

{"Collector Current (DC) ":"0.4 A","Transistor Polarity":"NPN","Collector-Emitter Voltage":"20 V","Mounting":"Through Hole","Emitter-Base Voltage":"3 V","Category ":"Bipolar RF","Power Dissipation":"1 W","Rad Hardened":"No","Package Type":"TO-39","Collector-Base Voltage":"40 V","DC Current Gain":"40","Pin Count":"3","Number of Elements":"1"}...

{"Status":"ACTIVE","Collector-base Capacitance-Max":"3.5 pF","Terminal Finish":"TIN LEAD","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, CERAMIC, CERSOT-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"1 W","Package Style":"SMALL OUTLINE","Collector Current-Max (IC)":"0.4000 A","Collector-emitter Voltage-Max":"20 V","Transistor Application":"AMPLIFIER","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Number of Elements":"1","Transistor E...

{"Mounting":"Surface Mount","Rad Hardened":"No","Package Type":"UB","Pin Count":"3","Transistor Polarity":"NPN"}...