Product Datasheet Search Results:
5 Pages, 142 KB, Scan- 2N6757
- Fairchild Semiconductor
- N-Channel Power MOSFETs, 9A, 150V/200V
4 Pages, 116 KB, Scan- 2N6757
- General Electric Solid State
- N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A.
4 Pages, 120 KB, Scan- 2N6757
- Harris Semiconductor
- Power MOSFET Data Book 1990
12 Pages, 1094 KB, Original- 2N6757
- Ixys Corporation
- High Voltage Power MOSFETs
1 Pages, 32 KB, Original- 2N6757
- National Semiconductor
- N-Channel Power MOSFETs
2 Pages, 17 KB, Original- 2N6757
- Semelab Plc.
- 8 A, 150 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
2 Pages, 17 KB, Original- 2N6757R1
- Semelab Plc.
- 8 A, 150 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
Product Details Search Results:
Semelab.co.uk/2N6757
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"TO-3","Pulsed Drain Current-Max (IDM)":"12 A","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","...
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Semelab.co.uk/2N6757R1
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"PIN\/PEG","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.6000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"12 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"150 ...
1400 Bytes - 08:32:28, 06 October 2024
