Datasheet.Directory

{"C(iss) Max. (F)":"900p","Absolute Max. Power Diss. (W)":"25","g(fs) Max, (S) Trans. conduct,":"7.5","r(DS)on Max. (Ohms)":"0.4","@V(DS) (V) (Test Condition)":"5.0","I(GSS) Max. (A)":"100n","@I(D) (A) (Test Condition)":"3.5","Package":"TO-39","I(DSS) Min. (A)":"1m","Military":"Y","Mil Number":"JANTX2N6798","t(r) Max. (s) Rise time":"50n","V(BR)DSS (V)":"200","t(f) Max. (s) Fall time.":"40n","g(fs) Min. (S) Trans. conduct.":"2.5","I(D) Abs. Drain Current (A)":"5.5"}...

{"C(iss) Max. (F)":"900p","Absolute Max. Power Diss. (W)":"25","g(fs) Max, (S) Trans. conduct,":"7.5","r(DS)on Max. (Ohms)":"0.4","@V(DS) (V) (Test Condition)":"5.0","I(GSS) Max. (A)":"100n","@I(D) (A) (Test Condition)":"3.5","Package":"TO-39","I(DSS) Min. (A)":"1m","Military":"Y","Mil Number":"JANTXV2N6798","t(r) Max. (s) Rise time":"50n","V(BR)DSS (V)":"200","t(f) Max. (s) Fall time.":"40n","g(fs) Min. (S) Trans. conduct.":"2.5","I(D) Abs. Drain Current (A)":"5.5"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"25(W)","Continuous Drain Current":"5.5(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"200(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-39","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"25(W)","Continuous Drain Current":"5.5(A)","Mounting":"Through Hole","Drain-Source On-Volt":"200(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-39","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"25(W)","Continuous Drain Current":"5.5(A)","Mounting":"Through Hole","Drain-Source On-Volt":"200(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-39","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Continuous Drain Current":"5.5(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"200(V)","Power Dissipation":"25(W)","Operating Temp Range":"-55C to 150C","Package Type":"LLCC","Type":"Power MOSFET","Pin Count":"18","Number of Elements":"1"}...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"2 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4200 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"22 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-M...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.4000 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","DS Breakdown Voltage-Min":"200 V","Number o...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.4000 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","DS Breakdown Voltage-Min":"200 V","Number o...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.4000 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals"...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.4000 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"3","DS Breakdown Voltage-Min":"200 V","Number o...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.4000 ohm","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals"...