Product Datasheet Search Results:

2N7002T/R.pdf1 Pages, 31 KB, Original
2N7002T/R
N/a
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.
2N7002T/R.pdf11 Pages, 90 KB, Original
2N7002T/R
Nxp Semiconductors / Philips Semiconductors
N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 5000@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V
2N7002T/R13.pdf5 Pages, 157 KB, Original
2N7002T/R13
Panjit Semiconductor
250 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2N7002T/R7.pdf5 Pages, 157 KB, Original
2N7002T/R7
Panjit Semiconductor
250 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

Product Details Search Results:

Panjit.com.tw/2N7002T/R13
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMIC...
1556 Bytes - 05:20:49, 20 September 2024
Panjit.com.tw/2N7002T/R7
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3500 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMIC...
1550 Bytes - 05:20:49, 20 September 2024
Semiconductors.philips.com/2N7002T/R
{"C(iss) Max. (F)":"50p","Absolute Max. Power Diss. (W)":"200m","@V(GS) (V) (Test Condition)":"5.0","r(DS)on Max. (Ohms)":"7.5","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"800m","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"80m","V(BR)GSS (V)":"40","@I(D) (A) (Test Condition)":"500m","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"2.5","V(GS)th Min. (V)":"1.0","Package":"TO-236AB","Military":"N","I(DSS) Max. (A)":"1.0u","@(VDS) (V) (Test Condition)":"20","V(BR)DSS ...
1199 Bytes - 05:20:49, 20 September 2024